FinFET External Resistance Analysis by Extended Shift-and-Ratio Method.

Extraction and analysis of external resistance (${R}_{\textsf {ext}}$) have become increasingly important in modern CMOS technology research. We show that with certain assumptions, the well-known shift-and-ratio method can be extended and still be useful for ${R}_{\textsf {ext}}$ extraction in short-channel devices. Its application to advanced FinFET devices in both simulation and hardware is presented. [ABSTRACT FROM AUTHOR]