SrTa2O6 induced low voltage operation of InGaZnO thin-film transistors.

MLA

Takahashi, Takanori, et al. “SrTa2O6 Induced Low Voltage Operation of InGaZnO Thin-Film Transistors.” Thin Solid Films, vol. 665, Nov. 2018, pp. 173–78. EBSCOhost, https://doi.org/10.1016/j.tsf.2018.09.020.

APA

Takahashi, T., Hoga, T., Miyanaga, R., Fujii, M. N., Ishikawa, Y., Uraoka, Y., & Uchiyama, K. (2018). SrTa2O6 induced low voltage operation of InGaZnO thin-film transistors. Thin Solid Films, 665, 173–178. https://doi.org/10.1016/j.tsf.2018.09.020

Chicago

Takahashi, Takanori, Takeshi Hoga, Ryoko Miyanaga, Mami N. Fujii, Yasuaki Ishikawa, Yukiharu Uraoka, and Kiyoshi Uchiyama. 2018. “SrTa2O6 Induced Low Voltage Operation of InGaZnO Thin-Film Transistors.” Thin Solid Films 665 (November): 173–78. doi:10.1016/j.tsf.2018.09.020.