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Retraction notice to "High quality N-polar GaN two-dimensional growth on c-plane sapphire by metalorganic vapor phase epitaxy" [Journal of Crystal Growth, 366 (2013) 35-38].
- Source :
-
Journal of Crystal Growth . Dec2018, Vol. 503, p65-65. 1p. - Publication Year :
- 2018
- Subjects :
- *CRYSTAL growth
*ORGANOMETALLIC compounds
Subjects
Details
- Language :
- English
- ISSN :
- 00220248
- Volume :
- 503
- Database :
- Academic Search Index
- Journal :
- Journal of Crystal Growth
- Publication Type :
- Academic Journal
- Accession number :
- 132288854
- Full Text :
- https://doi.org/10.1016/j.jcrysgro.2018.09.044