Optimization of electrical treatment strategy for surface roughness reduction in conducting thin films.

The surface roughness of deposited conducting thin films is responsible for various materials reliability problems in nanoelectronics and nanofabrication technologies. Here, we report a modeling and simulation study that aims at optimizing the electrical surface treatment of deposited conducting thin films as a physical processing strategy for their surface roughness reduction. Our study is based on a continuum model of film surface morphological evolution that accounts for the residual stress in the deposited conducting thin film, the film's wetting of the substrate layer that it is deposited on, film texture and surface diffusional anisotropy, and surface electromigration. Through systematic linear stability analysis and dynamical simulation protocols, we examine in detail the effects of film surface crystallographic orientation and applied electric field direction toward minimizing the electric field strength required for film surface smoothening. We find that the critical electric field strength requirement for surface roughness reduction on {110}, {100}, and {111} surfaces of face-centered cubic crystalline conducting thin films exhibits a very strong dependence on the applied electric field direction, expressed as the electric field misalignment with respect to the principal residual stress directions in the film and the fast surface diffusion directions. Based on these findings, we optimize the electrical treatment strategy for surface roughness reduction of conducting thin films with respect to all relevant processing and material parameters. [ABSTRACT FROM AUTHOR]