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Low-resistance and transparent ohmic contacts to p-type GaN using Zn–Ni solid solution/Au scheme.
- Source :
-
Applied Physics Letters . 6/7/2004, Vol. 84 Issue 23, p4663-4665. 3p. 4 Graphs. - Publication Year :
- 2004
-
Abstract
- High-quality Zn–Ni solid solution(8 nm)/Au(8 nm) ohmic contacts on p-GaN (5×1017 cm-3) have been investigated by means of current–voltage (I–V) measurements and x-ray photoemission spectroscopy. The as-deposited contact shows nonlinear I–V characteristics. However, oxidizing the contacts at 530 °C for 1 min in air ambient gives rise to considerable improvement in their I–V behaviors, yielding a specific contact resistance of 5.2×10-5 Ω cm2. The light transmittance of the annealed Zn–Ni solid solution/Au contacts is measured to be better than 74% at a wavelength of 470 nm. Green light-emitting diodes (LEDs) fabricated with the annealed Zn–Ni solid solution/Au contacts give a forward-bias voltage of 3.39 V at an injection current of 20 mA, which is better than that of the LEDs with the oxidized Ni/Au contacts. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 84
- Issue :
- 23
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 13203731
- Full Text :
- https://doi.org/10.1063/1.1759774