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Detection of counterfeited ICs via on-chip sensor and post-fabrication authentication policy.

Authors :
Kim, Taeyoung
Tan, Sheldon X.-D.
Cook, Chase
Sun, Zeyu
Source :
Integration: The VLSI Journal. Sep2018, Vol. 63, p31-40. 10p.
Publication Year :
2018

Abstract

Abstract Counterfeiting of integrated circuits (ICs) has become an increasingly vital concern for the security of commercial and mission-critical systems. Moreover, they pose an immense economic, security, and safety threat. We propose a comprehensive detection and prevention framework consisting of a multi-functional on-chip aging sensor, and post-fabrication authentication methodology. This framework targets several classes of counterfeit ICs, such as recycled, remarked, out-of-spec, cloned, and over-produced ICs. First, the new sensor consists of both antifuse memory and aging sensors. To reduce reference-circuit related area-overhead, the initial electronic properties of sensor circuits are stored in a global database, accessed by unique chip via challenge-response pairs. Second, this work consists of a two aging-sensor approach, based on IC wear-out effects, using a recently proposed electromigration (EM) aging sensor and a ring oscillator aging sensor. This method can be effective for chip usage estimation of both short and long time periods. Hence, it can serve as a more accurate timer for the chip to meter the long term usage, which can allow for timed services of some functionality of a chip, in addition to detection of the recycled/remark ICs. Third, on top of the new sensor, we propose a new post-fabrication authentication methodology to detect and prevent non-defective counterfeit ICs. All fabricated ICs will be registered in a global database and activated with a unique chip ID, which is written into the antifuse memory. Simulation results show that the combined aging sensors have a high degree of accuracy when compared to traditional on-chip sensors. Highlights • We propose a new on-chip sensor which combines a one-time programmable (OTP) antifuse memory block with existing aging sensors. Unlike existing methods, here, the memory block is not used as a counter but as a storage for a unique chip ID, timestamp of activation, and other important chip assets. The critical information stored in antifuse memory can be encrypted against tampering and be verified by challenge-response pairs. • The proposed on-chip sensor combines two types of aging sensors to detect short-term and long-term aging effects effectively and area-efficiently. The RO-based sensor is effective for short-time usage detection, and the EM-based aging sensor is accurate and area-efficient for long-term usage detection. The EM-based aging sensor exploits the natural aging/failure mechanism of interconnect wires to time the aging of the chip. It can serve as a more accurate timer for the chip to meter the usage of long time periods. This method enables timed service for some functionality of a chip and can also avoid over-usage of the authorized period for a chip or a system under certain security requirements. • In addition to the on-chip aging sensor, we also propose a post-fabrication authentication methodology to detect and prevent non-defective counterfeit ICs. All fabricated ICs are registered and activated with a unique chip ID in a global database. The unique chip ID will be written into the antifuse memory during a registration process and the chip will be activated. This method not only prevents cloned and over-produced ICs, but also mitigates the need for reference circuits in existing aging sensor designs. This significantly reduces area overhead, as the initial electronic properties of the sensor circuits can be stored in the global database. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
01679260
Volume :
63
Database :
Academic Search Index
Journal :
Integration: The VLSI Journal
Publication Type :
Academic Journal
Accession number :
132036802
Full Text :
https://doi.org/10.1016/j.vlsi.2018.05.002