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Publisher’s Note: “Memory effect of oxide/SiC:O/oxide sandwiched structures” [Appl. Phys. Lett. 84, 2094 (2004)].

Authors :
Chang, T. C.
Yan, S. T.
Yang, F. M.
Liu, P. T.
Sze, S. M.
Source :
Applied Physics Letters. 6/7/2004, Vol. 84 Issue 23, p4815-4815. 1p.
Publication Year :
2004

Abstract

Presents a correction to the article "Memory Effect of Oxide/SiC: O/Oxide Sandwiched Structures," published in the volume 84, 2004 issue of the periodical "Applied Physics Letters."

Subjects

Subjects :
*PHYSICS
*SERIAL publications

Details

Language :
English
ISSN :
00036951
Volume :
84
Issue :
23
Database :
Academic Search Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
13203679
Full Text :
https://doi.org/10.1063/1.1761633
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