Interaction between the divacancy and hydrogen in silicon: Observation of fast and slow kinetics.

The divacancy (V2) is one of the fundamental defects in silicon. However, the interaction of V2 with hydrogen is still not fully understood. In the present work, deep level transient spectroscopy (DLTS) results on hydrogen-assisted annealing of V2 are presented. H+ ions were implanted with multiple energies into n-type Czochralski-grown samples, yielding uniform (box-like) concentration-versus-depth profiles of V2 and hydrogen in the region probed by the DLTS measurements. The evolution kinetics of V2 reveals two distinct processes: (i) a fast one attributed to dissociation of phosphorus-hydrogen pairs and reaction with highly mobile atomic Hi and (ii) a slow one whose origin is not identified yet. During the slow process, we observe the formation of a hydrogen-related electronic state, labeled E5* and positioned ∼0.42 eV below the conduction band edge. The growth of E5* displays a close one-to-one proportionality with the loss of a V2-related DLTS peak, presumably due to V2H, overlapping with that of the single negatively charged V2. [ABSTRACT FROM AUTHOR]