Instability of crystal/melt interface in Si-rich SiGe.

An investigation was carried out into the instability of the crystal/melt interface in Si-rich SiGe, and the effects of the Ge concentration and growth velocity on the periodicity of zigzag facets at the interface were determined. It was found that the periodicity at the onset of instability became shorter with the increasing growth velocity and Ge concentration. [ABSTRACT FROM AUTHOR]