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Realizing an Epitaxial Decorated Stanene with an Insulating Bandgap.

Authors :
Zang, Yunyi
Jiang, Tian
Gong, Yan
Guan, Zhaoyong
Liu, Chong
Liao, Menghan
Zhu, Kejing
Li, Zhe
Wang, Lili
Li, Wei
Song, Canli
Zhang, Ding
Xu, Yong
He, Ke
Ma, Xucun
Zhang, Shou‐Cheng
Xue, Qi‐Kun
Source :
Advanced Functional Materials. 8/29/2018, Vol. 28 Issue 35, p1-1. 7p.
Publication Year :
2018

Abstract

Abstract: The exploration of intriguing topological quantum physics in stanene has attracted enormous interest but is challenged by lacking desirable material samples. The successful fabrication of monolayer stanene on PbTe(111) films with low‐temperature molecular beam epitaxy and thorough characterizations of its atomic and electronic structures are reported here. In situ angle‐resolved photoemission spectroscopy together with first‐principles calculations identify two hole bands of p xy orbital with a spin‐orbit coupling induced band splitting and meanwhile reveal an automatic passivation of p z orbital of stanene. Importantly, material properties are tuned by substrate engineering, realizing a decorated stanene sample with truly insulating bulk on Sr‐doped PbTe. This finding paves a road for studies of stanene‐based topological quantum effects and electronics. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
1616301X
Volume :
28
Issue :
35
Database :
Academic Search Index
Journal :
Advanced Functional Materials
Publication Type :
Academic Journal
Accession number :
131456041
Full Text :
https://doi.org/10.1002/adfm.201802723