Cite
Bandgap Narrowing in Non‐Fullerene Acceptors: Single Atom Substitution Leads to High Optoelectronic Response Beyond 1000 nm.
MLA
Lee, Jaewon, et al. “Bandgap Narrowing in Non‐Fullerene Acceptors: Single Atom Substitution Leads to High Optoelectronic Response Beyond 1000 Nm.” Advanced Energy Materials, vol. 8, no. 24, Aug. 2018, p. 1. EBSCOhost, https://doi.org/10.1002/aenm.201801212.
APA
Lee, J., Ko, S., Seifrid, M., Lee, H., Luginbuhl, B. R., Karki, A., Ford, M., Rosenthal, K., Cho, K., Nguyen, T., & Bazan, G. C. (2018). Bandgap Narrowing in Non‐Fullerene Acceptors: Single Atom Substitution Leads to High Optoelectronic Response Beyond 1000 nm. Advanced Energy Materials, 8(24), 1. https://doi.org/10.1002/aenm.201801212
Chicago
Lee, Jaewon, Seo‐Jin Ko, Martin Seifrid, Hansol Lee, Benjamin R. Luginbuhl, Akchheta Karki, Michael Ford, et al. 2018. “Bandgap Narrowing in Non‐Fullerene Acceptors: Single Atom Substitution Leads to High Optoelectronic Response Beyond 1000 Nm.” Advanced Energy Materials 8 (24): 1. doi:10.1002/aenm.201801212.