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Single-Event Burnout Mechanisms in SiC Power MOSFETs.
- Source :
-
IEEE Transactions on Nuclear Science . Aug2018, Vol. 65 Issue 8, p1951-1955. 5p. - Publication Year :
- 2018
-
Abstract
- Heavy ion-induced single-event burnout (SEB) is investigated in high-voltage silicon carbide power MOSFETs. Experimental data for 1200-V SiC power MOSFETs show a significant decrease in SEB onset voltage for particle linear energy transfers greater than 10 MeV/cm2/mg, above which the SEB threshold voltage is nearly constant at half of the rated maximum operating voltage for these devices. TCAD simulations show a parasitic bipolar junction transistor turn-on mechanism, which drives the avalanching of carriers and leads to runaway drain current, resulting in SEB. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189499
- Volume :
- 65
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Nuclear Science
- Publication Type :
- Academic Journal
- Accession number :
- 131346394
- Full Text :
- https://doi.org/10.1109/TNS.2018.2849405