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Facile fabrication of POSS-Modified MoS2/PMMA nanocomposites with enhanced thermal, mechanical and optical limiting properties.

Authors :
Liao, Qiaobo
Zhang, Qi
Wang, Xuelin
Li, Xinle
Deng, Guoqing
Meng, Zhen
Xi, Kai
Zhan, Peng
Source :
Composites Science & Technology. Sep2018, Vol. 165, p388-396. 9p.
Publication Year :
2018

Abstract

A facile strategy was applied to transfer chemically exfoliated molybdenum disulphide (MoS 2 ) nanosheets from aqueous medium to organic solvents. The MoS 2 nanosheets were then modified by trisilanol-phenyl-POSS (T 7 POSS) which was confirmed by Fourier transform infrared (FT-IR), X-ray photoelectron spectroscopy (XPS) and Powder X-Ray Diffraction (PXRD). The modified MoS 2 nanosheets were then incorporated into poly (methyl methacrylate) (PMMA) via a simple solution blending method. The Scanning Electron Microscope (SEM) and Transmission electron microscope (TEM) were employed to demonstrate the well-dispersion of nanosheets in polymeric matrix. Compared to neat PMMA, the decomposition temperatures (T d ) and the half weight decomposition temperatures (T half ) of POSS-MoS 2 /PMMA nanocomposites at nanosheets concentration of 0.2 wt% were dramatically increased by 35.2 °C and 35.3 °C, respectively. Meanwhile, according to the measurements of Dynamic Mechanical Analysis (DMA), the storage modulus at 30 °C is significantly improved by 5.2 times and the glass transition temperature (T g ) is also enhanced by 6.2 °C. Remarkably, POSS-MoS 2 /PMMA nanocomposites possess low optical limiting differential transmittance T c (0.5%), low nonlinear optical absorption onset threshold F ON (0.02 J⋅cm −2 ), low optical limiting threshold F OL (0.4 J⋅cm −2 ) and high nonlinear coefficient β (297⋅cm GW −1 ), highlighting their vast potential in the development of solid-state optical limiting materials. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
02663538
Volume :
165
Database :
Academic Search Index
Journal :
Composites Science & Technology
Publication Type :
Academic Journal
Accession number :
131184981
Full Text :
https://doi.org/10.1016/j.compscitech.2018.07.008