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Interfacial carrier dynamics of graphene on SiC, traced by the full-range time-resolved core-level photoemission spectroscopy.
- Source :
-
Applied Physics Letters . 7/30/2018, Vol. 113 Issue 5, pN.PAG-N.PAG. 4p. 1 Diagram, 1 Chart, 2 Graphs. - Publication Year :
- 2018
-
Abstract
- Carrier dynamics through a heterointerface of a Dirac material and a semiconductor was studied by the measurement of the full-range time-resolved core-level photoemission spectroscopy using synchrotron radiation. The electron-hole recombination process during relaxation of the surface photovoltage effect was delayed in a graphene layer due to the bottleneck effect of Dirac cones. When an intermediate buffer layer exists, the recombination mainly takes place at the interfacial Si dangling-bond sites and the relaxation time shortens by one-order of magnitude. The present result demonstrates unusual carrier dynamics at a semiconductor surface, terminated by a layer of the Dirac material. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 113
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 131069129
- Full Text :
- https://doi.org/10.1063/1.5043223