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Cavity-enhanced photoluminescence of SiGe/Si multiquantum wells grown on silicon-on-insulator substrate.
- Source :
-
Journal of Applied Physics . 5/15/2004, Vol. 95 Issue 10, p5914-5916. 3p. 1 Diagram, 3 Graphs. - Publication Year :
- 2004
-
Abstract
- Sharp and strong room-temperature photoluminescence (PL) of the Si 0.59 Ge 0.41/Si multiquantum wells grown on the silicon-on-insulator substrate is investigated. The cavity formed by the mirrors at the surface and the buried SiO 2 interface enhances the PL emission and has a wavelength-selective effect on the luminescence. The peak position is consistent with the simulation result and independent of the exciting power, which indicates a strong cavity effect on the room-temperature PL. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 95
- Issue :
- 10
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 13029303
- Full Text :
- https://doi.org/10.1063/1.1707203