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Enhanced dielectric breakdown strength in Ni2O3 modified Al2O3-SiO2-TiO2 based dielectric ceramics.
- Source :
-
Journal of the European Ceramic Society . Sep2018, Vol. 38 Issue 11, p3861-3866. 6p. - Publication Year :
- 2018
-
Abstract
- Dielectric ceramics have raised particular interest since they enable pulsed-power systems to achieve high voltage gradient and compact miniaturization. In this work, x wt%Ni 2 O 3 doped Al 2 O 3 -SiO 2 -TiO 2 based dielectric ceramics were prepared using conventional solid-state reaction and the effects of Ni 2 O 3 on the crystal structure, dielectric properties and dielectric breakdown strength were investigated. It was found that with the doping of Ni 2 O 3 , the Al 2 O 3 -SiO 2 -TiO 2 based dielectric ceramics became denser and the distribution of each phase was more uniform. For the composition of x = 2.0, the dielectric breakdown strength was increased into 82.1 kV/mm, more than twice compared with that of the undoped one. In addition, the relationship between the dielectric breakdown strength and the resistance of Al 2 O 3 -SiO 2 -TiO 2 based dielectric ceramics was discussed. The results show that the doping of Ni 2 O 3 is a very feasible way to improve the dielectric breakdown strength and optimize the dielectric properties for the Al 2 O 3 -SiO 2 -TiO 2 based dielectric ceramics. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 09552219
- Volume :
- 38
- Issue :
- 11
- Database :
- Academic Search Index
- Journal :
- Journal of the European Ceramic Society
- Publication Type :
- Academic Journal
- Accession number :
- 129847524
- Full Text :
- https://doi.org/10.1016/j.jeurceramsoc.2018.04.027