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X-Ray Diffraction Analysis of Features of the Crystal Structure of GaN/Al0.32Ga0.68N HEMT-Heterostructures by the Williamson-Hall Method.
- Source :
-
Semiconductors . Jun2018, Vol. 52 Issue 6, p734-738. 5p. - Publication Year :
- 2018
-
Abstract
- The fitting of θ/2θ and ω peaks in X-ray diffraction curves is shown to be most accurate in the case of using an inverse fourth-degree polynomial or probability density function with Student’s distribution (Pearson type VII function). These functions describe well both the highest-intensity central part of the experimental peak and its low-intensity broadened base caused by X-ray diffuse scattering. The mean microdeformation ε and mean vertical domain size D are determined by the Williamson-Hall method for layers of GaN (ε ≈ 0.00006, D ≈ 200 nm) and Al0.32Ga0.68N (ε = 0.0032 ± 0.0005, D = 24 ± 7 nm). The D value obtained for the Al0.32Ga0.68N layer is most likely to result from the nominal thickness of this layer, which is 11 nm. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 10637826
- Volume :
- 52
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- Semiconductors
- Publication Type :
- Academic Journal
- Accession number :
- 129651852
- Full Text :
- https://doi.org/10.1134/S1063782618060209