Cite
Polarity‐ and Site‐Controlled Metal Organic Vapor Phase Epitaxy of 3D‐GaN on Si(111).
MLA
Blumberg, Christian, et al. “Polarity‐ and Site‐Controlled Metal Organic Vapor Phase Epitaxy of 3D‐GaN on Si(111).” Physica Status Solidi (B), vol. 255, no. 5, May 2018, p. 1. EBSCOhost, https://doi.org/10.1002/pssb.201700485.
APA
Blumberg, C., Grosse, S., Weimann, N., Tegude, F., & Prost, W. (2018). Polarity‐ and Site‐Controlled Metal Organic Vapor Phase Epitaxy of 3D‐GaN on Si(111). Physica Status Solidi (B), 255(5), 1. https://doi.org/10.1002/pssb.201700485
Chicago
Blumberg, Christian, Simon Grosse, Nils Weimann, Franz‐Josef Tegude, and Werner Prost. 2018. “Polarity‐ and Site‐Controlled Metal Organic Vapor Phase Epitaxy of 3D‐GaN on Si(111).” Physica Status Solidi (B) 255 (5): 1. doi:10.1002/pssb.201700485.