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Sb-related defects in Sb-doped ZnO thin film grown by pulsed laser deposition.
- Source :
-
Journal of Applied Physics . 2018, Vol. 123 Issue 16, pN.PAG-N.PAG. 11p. 1 Chart, 13 Graphs. - Publication Year :
- 2018
-
Abstract
- Sb-doped ZnO films were fabricated on c-plane sapphire using the pulsed laser deposition method and characterized by Hall effect measurement, X-ray photoelectron spectroscopy, X-ray diffraction, photoluminescence, and positron annihilation spectroscopy. Systematic studies on the growth conditions with different Sb composition, oxygen pressure, and post-growth annealing were conducted. If the Sb doping concentration is lower than the threshold ∼8 × 1020 cm−3, the as-grown films grown with an appropriate oxygen pressure could be n∼4 × 1020 cm−3. The shallow donor was attributed to the SbZn related defect. Annealing these samples led to the formation of the SbZn-2VZn shallow acceptor which subsequently compensated for the free carrier. For samples with Sb concentration exceeding the threshold, the yielded as-grown samples were highly resistive. X-ray diffraction results showed that the Sb dopant occupied the O site rather than the Zn site as the Sb doping exceeded the threshold, whereas the SbO related deep acceptor was responsible for the high resistivity of the samples. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 123
- Issue :
- 16
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 129382361
- Full Text :
- https://doi.org/10.1063/1.4997510