COMPARATIVE ANALYSIS OF BIPOLAR JUNCTION TRANSISTORS AND HETEROJUNCTION BIPOLAR TRANSISTORS USING MATLAB.

The study presents a comparative analysis between the classic bipolar silicon junction transistor (BJT) and AlGaAs/GaAs heterojunction bipolar transistor (HBT), pointing out the benefits of the latter. The mathematical simulation of the specific physical processes in the two devices is accompanied by a numerical analysis using Matlab application. The computer analysis highlights the benefits of using HBT transistors, namely: static amplification factor with values of 1000-2000 and a transition frequency of 400-500 GHz. [ABSTRACT FROM AUTHOR]