Development of the Growth Technology of Highly Homogeneous Semiconductor Crystals.

Authors :: Strelov, V. I.
Prokhorov, I. A.
Korobeinikova, E. N.
Sidorov, V. S.
Vlasov, V. N.
Artemyev, V. K.
Source :: Crystallography Reports. Mar2018, Vol. 63 Issue 2, p284-286. 3p.
Publication Year :: 2018
Abstract: Different technological solutions for growing GaSb(Te) and Ge(Ga) single crystals, making it possible to optimize the growth of highly homogeneous (at the microlevel) semiconductor crystals by the Bridgman method, are described. The possibility of implementing steady-state growth conditions (providing uniform dopant distribution over the crystal) has been experimentally confirmed. [ABSTRACT FROM AUTHOR]

Subjects :: *CRYSTAL structure
*SEMICONDUCTOR materials
*DOPING agents (Chemistry)
*CONVECTIVE flow
*CRYSTAL growth

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