Interplay Between Extra Charge Injection and Lattice Evolution in VO2/CH3NH3PbI3 Heterostructure.

Research interest in VO2, one of the well‐known transition metal oxides featured by the metal–insulator transition, has resulted in a half‐century's accumulation of fundamentals toward a crystal clear description of the transition mechanism. To understand the interplay between extra electrons and lattice across the transition in VO2‐based integrated electronic devices, a heterostructure of VO2/CH3NH3PbI3 is constructed to investigate the structural evolution when hot electrons are injected from CH3NH3PbI3 to VO2 upon light irradiation. The decrease in the resistance of VO2 confirms the presence of extra electrons injected from CH3NH3PbI3 upon light irradiation. Then, Raman spectra are used to study the structural evolution of VO2 with temperature. The damping in the Raman intensity and the shift in Raman peak of VO2 near transition temperature implicate that the interplay between extra electron injection and lattice weakens the V–V vibration in VO2. This study provides a fundamental framework for understanding the interplay between extra charge and lattice in VO2. [ABSTRACT FROM AUTHOR]