Visible-blind and solar-blind detection induced by defects in AlGaN high electron mobility transistors.

Visible- and solar-blind detection was demonstrated using Al0.45Ga0.55N/Al0.30Ga0.70N and Al0.85Ga0.25N/Al0.70Ga0.30N high electron mobility transistors (HEMTs), respectively. Peak responsivities (<italic>S</italic>) of 3.9 × 106 A/W in the saturation mode and 6.2 × 104 A/W in the pinch-off mode were observed for the visible-blind Al0.45Ga0.55N/Al0.30Ga0.70N HEMT, and a peak <italic>S</italic> of 4.9 × 104 A/W was observed for the solar-blind Al0.85Ga0.15N/Al0.70Ga0.30N HEMT in the saturation mode. Spectrally resolved photocurrent investigation indicated that sub-bandgap absorption by defect states was the primary origin of the HEMTs' photoresponse. Defect-mediated responsivity caused slow photocurrent rise and fall times, but electrical pulsing was used to improve the bandwidth at the cost of optical gain. Operating HEMTs in this dynamic mode achieved a 25 Hz bandwidth with <italic>S</italic> = 2.9 × 105 A/W in accumulation and <italic>S</italic> = 2.0 × 104 A/W in pinch-off for visible-blind detection and <italic>S</italic> = 5.1 × 103 A/W for solar-blind detection. [ABSTRACT FROM AUTHOR]