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High-Q nanocavities in semiconductor-based three-dimensional photonic crystals.
- Source :
-
Electronics Letters (Wiley-Blackwell) . 3/8/2018, Vol. 54 Issue 5, p305-307. 2p. - Publication Year :
- 2018
-
Abstract
- The high-quality factors (Q-factors) of nanocavities in threedimensional photonic crystals were experimentally demonstrated by increasing the in-plane area of the structure. Entire structures made of GaAs were fabricated by a micro-manipulation technique, and the nanocavities contained InAs self-assembled quantum dots that emitted near-infrared light. The obtained Q-factor was improved to 93,000, which is 2.4 times larger than that in a previous report of a three-dimensional photonic crystal nanocavity. Due to this large Q-factor, a lasing oscillation from this cavity mode was successfully observed. [ABSTRACT FROM AUTHOR]
- Subjects :
- *PHOTONIC crystals
*GALLIUM arsenide
*OSCILLATIONS
*QUANTUM dots
*INDIUM arsenide
Subjects
Details
- Language :
- English
- ISSN :
- 00135194
- Volume :
- 54
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- Electronics Letters (Wiley-Blackwell)
- Publication Type :
- Academic Journal
- Accession number :
- 128223664
- Full Text :
- https://doi.org/10.1049/el.2017.4542