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Charge-transfer channel in quantum dot–graphene hybrid materials.

Authors :
Shuo Cao
Jingang Wang
Fengcai Ma
Mengtao Sun
Source :
Nanotechnology. 4/6/2018, Vol. 29 Issue 14, p1-1. 1p.
Publication Year :
2018

Abstract

The energy band theory of a classical semiconductor can qualitatively explain the charge-transfer process in low-dimensional hybrid colloidal quantum dot (QD)–graphene (GR) materials; however, the definite charge-transfer channels are not clear. Using density functional theory (DFT) and time-dependent DFT, we simulate the hybrid QD–GR nanostructure, and by constructing its orbital interaction diagram, we show the quantitative coupling characteristics of the molecular orbitals (MOs) of the hybrid structure. The main MOs are derived from the fragment MOs (FOs) of GR, and the Cd13Se13 QD FOs merge with the GR FOs in a certain proportion to afford the hybrid system. Upon photoexcitation, electrons in the GR FOs jump to the QD FOs, leaving holes in the GR FOs, and the definite charge-transfer channels can be found by analyzing the complex MOs coupling. The excited electrons and remaining holes can also be localized in the GR or the QD or transfer between the QD and GR with different absorption energies. The charge-transfer process for the selected excited states of the hybrid QD–GR structure are testified by the charge difference density isosurface. The natural transition orbitals, charge-transfer length analysis and 2D site representation of the transition density matrix also verify the electron–hole delocalization, localization, or coherence chacracteristics of the selected excited states. Therefore, our research enhances understanding of the coupling mechanism of low-dimensional hybrid materials and will aid in the design and manipulation of hybrid photoelectric devices for practical application in many fields. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
09574484
Volume :
29
Issue :
14
Database :
Academic Search Index
Journal :
Nanotechnology
Publication Type :
Academic Journal
Accession number :
128091498
Full Text :
https://doi.org/10.1088/1361-6528/aaac62