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TCAD Mobility Model of III-V Short-Channel Double-Gate FETs Including Ballistic Corrections.

Authors :
Carapezzi, Stefania
Caruso, Enrico
Gnudi, Antonio
Palestri, Pierpaolo
Reggiani, Susanna
Gnani, Elena
Source :
IEEE Transactions on Electron Devices. Dec2017, Vol. 64 Issue 12, p4882-4888. 7p.
Publication Year :
2017

Abstract

A TCAD-oriented mobility model, whose main features are: 1) inclusion of ballistic effects in the linear region and 2) smooth transition between the linear and saturation regions, is presented. It is applied to short-channel double-gate thin-body InGaAs MOSFETs. The bases of the model are the concept of ballistic mobility and Matthiessen's rule in the linear regime, and the saturation velocity within a modified Canali model at high-longitudinal fields. Comparisons with accurate semiclassical multivalley multisubband Monte Carlo transport simulations indicate that TCAD simulations making use of the proposed model are able to correctly predict the terminal currents and the internal device quantities in the linear regime in a 15-nm device with no need of fitting parameters. In the saturation region, an empirical adjustment of the saturation velocity is needed, after which currents are accurately predicted for a wide range of gate lengths and bias conditions. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00189383
Volume :
64
Issue :
12
Database :
Academic Search Index
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
127950409
Full Text :
https://doi.org/10.1109/TED.2017.2759420