Cite
Reconsideration of Dielectric Breakdown Mechanism of Gate Dielectrics on Basis of Dominant Carrier Change Model.
MLA
Okada, Kenji, et al. “Reconsideration of Dielectric Breakdown Mechanism of Gate Dielectrics on Basis of Dominant Carrier Change Model.” IEEE Transactions on Electron Devices, vol. 64, no. 11, Nov. 2017, pp. 4386–92. EBSCOhost, https://doi.org/10.1109/TED.2017.2747580.
APA
Okada, K., Kamei, M., & Ohno, S. (2017). Reconsideration of Dielectric Breakdown Mechanism of Gate Dielectrics on Basis of Dominant Carrier Change Model. IEEE Transactions on Electron Devices, 64(11), 4386–4392. https://doi.org/10.1109/TED.2017.2747580
Chicago
Okada, Kenji, Masayuki Kamei, and Shigeyuki Ohno. 2017. “Reconsideration of Dielectric Breakdown Mechanism of Gate Dielectrics on Basis of Dominant Carrier Change Model.” IEEE Transactions on Electron Devices 64 (11): 4386–92. doi:10.1109/TED.2017.2747580.