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Transformation of the Fermi surface and anisotropy phenomena in 2D hole gas at <f>GaAs/AlxGa1−xAs</f> heterointerface under uniaxial stress

Transformation of the Fermi surface and anisotropy phenomena in 2D hole gas at <f>GaAs/AlxGa1−xAs</f> heterointerface under uniaxial stress

Authors :
Minina, N.Ya.
Kolokolov, K.I.
Beneslavski, S.D.
Bogdanov, E.V.
Polyanskiy, A.V.
Savin, A.M.
Hansen, O.P.
Source :
Physica E. Apr2004, Vol. 22 Issue 1-3, p373. 4p.
Publication Year :
2004

Abstract

By numerical calculation the Fermi surface of two-dimensional (2D) holes at p-&lt;f&gt;GaAs/AlxGa1−xAs&lt;/f&gt; heterointerface is found to become strongly anisotropic under the application of in-plane uniaxial compression. This uniaxial stress-induced anisotropy of the energy spectrum reveals in more that two times increase of 2D hole mobility anisotropy (at uniaxial compression about &lt;f&gt;5 kbar&lt;/f&gt;), that is experimentally detected in such heterostructures. It leads also to considerable anisotropy of far-infrared absorption spectrum; absorption of light with polarization perpendicular to the direction of compression is smaller that the absorption of light with polarization parallel to the direction of compression. [Copyright &amp;y&amp; Elsevier]

Details

Language :
English
ISSN :
13869477
Volume :
22
Issue :
1-3
Database :
Academic Search Index
Journal :
Physica E
Publication Type :
Academic Journal
Accession number :
12788074
Full Text :
https://doi.org/10.1016/j.physe.2003.12.024