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Transformation of the Fermi surface and anisotropy phenomena in 2D hole gas at <f>GaAs/AlxGa1−xAs</f> heterointerface under uniaxial stress
Transformation of the Fermi surface and anisotropy phenomena in 2D hole gas at <f>GaAs/AlxGa1−xAs</f> heterointerface under uniaxial stress
- Source :
-
Physica E . Apr2004, Vol. 22 Issue 1-3, p373. 4p. - Publication Year :
- 2004
-
Abstract
- By numerical calculation the Fermi surface of two-dimensional (2D) holes at p-<f>GaAs/AlxGa1−xAs</f> heterointerface is found to become strongly anisotropic under the application of in-plane uniaxial compression. This uniaxial stress-induced anisotropy of the energy spectrum reveals in more that two times increase of 2D hole mobility anisotropy (at uniaxial compression about <f>5 kbar</f>), that is experimentally detected in such heterostructures. It leads also to considerable anisotropy of far-infrared absorption spectrum; absorption of light with polarization perpendicular to the direction of compression is smaller that the absorption of light with polarization parallel to the direction of compression. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 13869477
- Volume :
- 22
- Issue :
- 1-3
- Database :
- Academic Search Index
- Journal :
- Physica E
- Publication Type :
- Academic Journal
- Accession number :
- 12788074
- Full Text :
- https://doi.org/10.1016/j.physe.2003.12.024