Carrier Density Profile in Weakly Coupled GaAs/AlGaAs Superlattices.

The effect of doping level on the current–voltage characteristics of semiconductor heterostructures with GaAs/AlGaAs superlattices was studied by the electrochemical capacitance–voltage profiling method. It was shown that a high density of free electrons in the GaAs/AlGaAs superlattice screens the external electric field and inhibits the formation of a domain with a high electric field that is responsible for resonant tunneling in weakly coupled superlatticest. © 2004 MAIK “Nauka / Interperiodica”. [ABSTRACT FROM AUTHOR]