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Anisotropy effect on strain-induced instability during growth of heteroepitaxial films.
- Source :
-
Journal of Materials Science . Apr2018, Vol. 53 Issue 8, p5777-5785. 9p. 1 Diagram, 2 Charts, 6 Graphs. - Publication Year :
- 2018
-
Abstract
- The use of misfit strain to improve the electronic performance of semiconductor films is a common strategy in modern electronic and photonic device fabrication. However, pursuing a favorable higher strain could lead to mechanical instability, on which systematic and quantitative understandings are yet to be achieved. In this paper, we investigate the anisotropy effects on strain-induced thin-film surface roughening by phase field modeling coupled with elasticity. We find that compared with films grown along {111} and {100} surfaces, the instability of {110} film occurs at a much lower strain. Our simulations capture the evolution of interface morphology and stress distribution during the roughening process. Similar characterizations are performed for heteroepitaxial growth from a surface pit. Finally, from 3D simulations, we show that the surface roughening pattern on {110} film exhibits a clear in-plane orientation preference, consistent with experimental observations. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00222461
- Volume :
- 53
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- Journal of Materials Science
- Publication Type :
- Academic Journal
- Accession number :
- 127735749
- Full Text :
- https://doi.org/10.1007/s10853-017-1920-x