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Estimation of the Single-Event Upset Sensitivity of Advanced SOI SRAMs.
- Source :
-
IEEE Transactions on Nuclear Science . Jan2018, Vol. 65 Issue 1, p339-345. 7p. - Publication Year :
- 2018
-
Abstract
- The single-event upset (SEU) sensitivity of ultra-thin silicon on insulator (SOI), SOI FinFET, and NanoWireFET static random access memories (SRAMs) is investigated using a straightforward multiple-scale approach based on open source and commercial codes. Both Monte-Carlo and technology computer aided design (TCAD) tools are used to estimate the SEU cross section of innovative technologies. Heavy-ion experiments performed on transistors are used to validate TCAD models and 3-D device structures. TCAD simulations are then performed on 3-D SRAM cells to calculate the upset threshold for each technology. It is used as upset criterion in Monte-Carlo simulations of deposited energy in silicon microvolumes to estimate the SEU cross section of innovative SOI technologies. Finally, multiple-bit upsets are addressed to draw trends on the sensitivity of such highly scaled technologies to multiple events. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189499
- Volume :
- 65
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Nuclear Science
- Publication Type :
- Academic Journal
- Accession number :
- 127490833
- Full Text :
- https://doi.org/10.1109/TNS.2017.2779786