Cite
Scaling Effects on Single-Event Transients in InGaAs FinFETs.
MLA
Gong, Huiqi, et al. “Scaling Effects on Single-Event Transients in InGaAs FinFETs.” IEEE Transactions on Nuclear Science, vol. 65, no. 1, Jan. 2018, pp. 296–303. EBSCOhost, https://doi.org/10.1109/TNS.2017.2778640.
APA
Gong, H., Ni, K., Zhang, E. X., Sternberg, A. L., Kozub, J. A., Ryder, K. L., Keller, R. F., Ryder, L. D., Weiss, S. M., Weller, R. A., Alles, M. L., Reed, R. A., Fleetwood, D. M., Schrimpf, R. D., Vardi, A., & del Alamo, J. A. (2018). Scaling Effects on Single-Event Transients in InGaAs FinFETs. IEEE Transactions on Nuclear Science, 65(1), 296–303. https://doi.org/10.1109/TNS.2017.2778640
Chicago
Gong, Huiqi, Kai Ni, En Xia Zhang, Andrew L. Sternberg, John A. Kozub, Kaitlyn L. Ryder, Ryan F. Keller, et al. 2018. “Scaling Effects on Single-Event Transients in InGaAs FinFETs.” IEEE Transactions on Nuclear Science 65 (1): 296–303. doi:10.1109/TNS.2017.2778640.