Cite

Real-time spectro-ellipsometric approach to distinguish between two-dimensional Ge layer growth and Ge dot formation on SiO2 substrates.

MLA

Akazawa, Housei. “Real-Time Spectro-Ellipsometric Approach to Distinguish between Two-Dimensional Ge Layer Growth and Ge Dot Formation on SiO2 Substrates.” Applied Surface Science, vol. 436, Apr. 2018, pp. 887–92. EBSCOhost, https://doi.org/10.1016/j.apsusc.2017.12.120.



APA

Akazawa, H. (2018). Real-time spectro-ellipsometric approach to distinguish between two-dimensional Ge layer growth and Ge dot formation on SiO2 substrates. Applied Surface Science, 436, 887–892. https://doi.org/10.1016/j.apsusc.2017.12.120



Chicago

Akazawa, Housei. 2018. “Real-Time Spectro-Ellipsometric Approach to Distinguish between Two-Dimensional Ge Layer Growth and Ge Dot Formation on SiO2 Substrates.” Applied Surface Science 436 (April): 887–92. doi:10.1016/j.apsusc.2017.12.120.