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Impacts of energy relaxation process on quasi-ballistic hole transport capability in germanium and silicon nanowires.

Authors :
Tanaka, H.
Suda, J.
Kimoto, T.
Source :
Journal of Applied Physics. 2018, Vol. 123 Issue 2, p1-N.PAG. 7p.
Publication Year :
2018

Abstract

The quasi-ballistic hole transport in germanium and silicon nanowires was theoretically investigated by solving the Boltzmann transport equation taking account of phonon scattering in an atomistic framework. Comparison of quasi-ballistic hole transport capabilities between germanium and silicon nanowires showed that the transmission coefficients for the two materials are similar. Then, the behavior of forward and backward current fluxes was analyzed focusing on the impact of energy relaxation process. The slower energy relaxation of holes in germanium nanowires leads to a longer distance where backscattering enables holes to return to the source. This cancels the benefit of the longer mean free path of holes in germanium nanowires, resulting in similar transmission coefficients in germanium and silicon nanowires. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00218979
Volume :
123
Issue :
2
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
127414043
Full Text :
https://doi.org/10.1063/1.5010052