Cite
Real-Time Junction Temperature Sensing for Silicon Carbide MOSFET With Different Gate Drive Topologies and Different Operating Conditions.
MLA
Niu, He, and Robert D. Lorenz. “Real-Time Junction Temperature Sensing for Silicon Carbide MOSFET With Different Gate Drive Topologies and Different Operating Conditions.” IEEE Transactions on Power Electronics, vol. 33, no. 4, Apr. 2018, pp. 3424–40. EBSCOhost, https://doi.org/10.1109/TPEL.2017.2704441.
APA
Niu, H., & Lorenz, R. D. (2018). Real-Time Junction Temperature Sensing for Silicon Carbide MOSFET With Different Gate Drive Topologies and Different Operating Conditions. IEEE Transactions on Power Electronics, 33(4), 3424–3440. https://doi.org/10.1109/TPEL.2017.2704441
Chicago
Niu, He, and Robert D. Lorenz. 2018. “Real-Time Junction Temperature Sensing for Silicon Carbide MOSFET With Different Gate Drive Topologies and Different Operating Conditions.” IEEE Transactions on Power Electronics 33 (4): 3424–40. doi:10.1109/TPEL.2017.2704441.