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Experimental examination of tunneling paths in SiGe/Si gate-normal tunneling field-effect transistors.
- Source :
-
Applied Physics Letters . 12/25/2017, Vol. 111 Issue 26, p1-5. 5p. - Publication Year :
- 2017
-
Abstract
- The benefits of a gate-normal tunneling architecture in enhancing the on-current and average subthreshold swing of tunneling field-effect transistors were scrutinized in experiment through careful physical analysis of a Si0.50Ge0.50/Si heterostructure. In accordance with theoretical predictions, it is confirmed that the on-current is governed by line tunneling scaling with the source-gate overlap area of our devices. Our analysis identifies the early onset of parasitic diagonal tunneling paths as most detrimental for a low average subthreshold swing. By counter doping the channel, this onset can be shifted favorably, permitting low average subthreshold swings down to 87 mV/dec over four decades of drain current and high on-off current ratios exceeding 106. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 111
- Issue :
- 26
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 127104601
- Full Text :
- https://doi.org/10.1063/1.4996109