A specific floating-body effect in fully depleted SOI MOSFETs with ultra-thin gate oxide

Transconductance measurements are performed on advanced fully depleted SOI MOSFETs and reveal a new floating-body effect. Gate tunneling current is responsible for the body charging and may lead to the onset of a strong second peak in front-gate transconductance. This effect occurs at low drain voltage and can be modulated by the back gate bias. We have investigated the size and the temperature (down to 100 K) dependence of the peak magnitude. A qualitative analytical model describes the onset and experimental behavior of the second transconductance peak. [Copyright &y& Elsevier]