Effect of Nb doping on structural and electrical properties of homoepitaxial rutile TiO2:Nb films.

Single crystalline homoepitaxial Nb doped TiO 2 (TiO 2 :Nb) films were deposited on rutile TiO 2 (r-TiO 2 ) (001) substrates by metal organic chemical vapor deposition (MOCVD). Effect of Nb doping on structural and electrical properties of the films were studied. The maximum Hall mobility of the obtained films reached as high as 14.0 cm 2 V −1 s −1 and the lowest resistivity of the films was 1.9 × 10 −1 Ω cm which was 7 orders of magnitude lower than that of pristine r-TiO 2 . The obtained films were single crystalline r-TiO 2 epitaxially grown along the (001) orientation. The relationship between the structural and electrical properties was discussed. TiO 2 :Nb films with high mobilities may have many potential applications in the field of transparent electronic devices. [ABSTRACT FROM AUTHOR]