Büttiker Probe-Based Modeling of TDDB: Application to Dielectric Breakdown in MTJs and MOS Devices.

MLA

Reza, Ahmed Kamal, et al. “Büttiker Probe-Based Modeling of TDDB: Application to Dielectric Breakdown in MTJs and MOS Devices.” IEEE Transactions on Electron Devices, vol. 64, no. 8, Aug. 2017, pp. 3337–45. EBSCOhost, https://doi.org/10.1109/TED.2017.2715164.

APA

Reza, A. K., Hassan, M. K., & Roy, K. (2017). Büttiker Probe-Based Modeling of TDDB: Application to Dielectric Breakdown in MTJs and MOS Devices. IEEE Transactions on Electron Devices, 64(8), 3337–3345. https://doi.org/10.1109/TED.2017.2715164

Chicago

Reza, Ahmed Kamal, Mohammad Khaled Hassan, and Kaushik Roy. 2017. “Büttiker Probe-Based Modeling of TDDB: Application to Dielectric Breakdown in MTJs and MOS Devices.” IEEE Transactions on Electron Devices 64 (8): 3337–45. doi:10.1109/TED.2017.2715164.