Effect of substrate temperature on self-assisted GaAs nanowires grown by Molecular Beam Epitaxy on GaAs (111)B substrates without SiO2 layer.

In this work, we demonstrate a self-assisted VLS growth of GaAs nanowires directly on GaAs (111)B substrates without assistance of SiO 2 layer. We believe that with this technique, we can overcome some inherent problems that usually occur in conventional self-assisted VLS growth and simplify the process. Moreover, to study the effect of substrate temperature, each nanowire sample was fabricated at the different temperature from 400 °C to 600 °C using Molecular Beam Epitaxy (MBE) technique. Surface morphology, elemental composition, and crystal structure of nanowire samples were characterized by Scanning Electron Microscope (SEM), Energy-dispersive X-ray spectroscopy (EDX), and X-ray Diffraction Analysis (XRD) respectively. [ABSTRACT FROM AUTHOR]