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Room-temperature silicon light-emitting diodes based on dislocation luminescence.
- Source :
-
Applied Physics Letters . 3/22/2004, Vol. 84 Issue 12, p2106-2108. 3p. 3 Graphs. - Publication Year :
- 2004
-
Abstract
- We demonstrate electroluminescence (EL) with an external efficiency of more than 0.1% at room temperature from glide dislocations in silicon. The key to this achievement is a considerable reduction of nonradiative carrier recombination at dislocations due to impurities and core defects by impurity gettering and hydrogen passivation, respectively, which is shown by means of deep-level transient spectroscopy. Time-resolved EL measurements reveal a response time below 1.8 μs, which is much faster, compared to the band-to-band luminescence of bulk silicon. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 84
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 12530497
- Full Text :
- https://doi.org/10.1063/1.1689402