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Operation and design of metal-oxide tunnel transistors.
- Source :
-
Journal of Applied Physics . 11/1/1998, Vol. 84 Issue 9, p5021. 11p. - Publication Year :
- 1998
-
Abstract
- Examines the calculation of the current-voltage (I-V) characteristics within the ballistic limit involving the metal-oxide tunnel transistors (MOTT). What the gate transconductance improves; Discussion on the saturation (knee) point and three modes of current transport across the device; How the low-voltage current saturation for MOTT is obtained.
- Subjects :
- *BALLISTICS
*METALLIC oxides
*TRANSISTORS
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 84
- Issue :
- 9
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 1243926
- Full Text :
- https://doi.org/10.1063/1.368749