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Theoretical consideration of spin-polarized resonant tunneling in magnetic tunnel junctions

Authors :
Mu, Hai-Feng
Zhu, Zhen-Gang
Zheng, Qing-Rong
Jin, Biao
Wang, Zheng-Chuan
Su, Gang
Source :
Physics Letters A. Mar2004, Vol. 323 Issue 3/4, p298. 7p.
Publication Year :
2004

Abstract

A recent elegant experimental realization [S. Yuasa et al., Science 297 (2002) 234] of the spin-polarized resonant tunneling in magnetic tunnel junctions is interpreted in terms of a two-band model. It is shown that the tunnel magnetoresistance (TMR) decays oscillatorily with the thickness of the normal metal (NM) layer, being fairly in agreement with the experimental observation. The tunnel conductance is found to decay with slight oscillations with the increase of the NM layer thickness, which is also well consistent with the experiment. In addition, when the magnetizations of both ferromagnet electrodes are not collinearly aligned, TMR is found to exhibit sharp resonant peaks at some particular thickness of the NM layer. The peaked TMR obeys nicely a Gaussian distribution against the relative orientation of the magnetizations. [Copyright &y& Elsevier]

Details

Language :
English
ISSN :
03759601
Volume :
323
Issue :
3/4
Database :
Academic Search Index
Journal :
Physics Letters A
Publication Type :
Academic Journal
Accession number :
12435024
Full Text :
https://doi.org/10.1016/j.physleta.2004.01.076