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High-Resolution X-ray Asymmetrical Reciprocal Space Mapping: A Technique for Structural Characterization of Semiconductor Superlattices.
- Source :
-
Spectroscopy . Jul2017, Vol. 32 Issue 7, p34-35. 2p. - Publication Year :
- 2017
-
Abstract
- The article discussed a method for structural characterization of semiconductor superlattices (SLs) using high resolution X-ray reciprocal space mapping of an asymmetrical reflection. This method relies on the determination of the satellite peak positions in reciprocal space and directly provides the superstructure parameters of the coherently grown SL.
- Subjects :
- *SUPERLATTICES
*SEMICONDUCTOR characterization
*X-rays
*RADIOGRAPHY
*X-ray spectra
Subjects
Details
- Language :
- English
- ISSN :
- 08876703
- Volume :
- 32
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- Spectroscopy
- Publication Type :
- Periodical
- Accession number :
- 124346148