Fermi-level pinning appears upon weak electrode-organic contact without gap states: A universal phenomenon.

We report computational and experimental studies (i) on the Fermi level (E F ) pinning phenomena in weakly interacting electrode-organic semiconductor systems with pentacene, N, N-Di(naphthalene-l-yl)-N, N’-diphenyl-benzidine (α-NPD) and Poly(9,9-dioctylfluorene-alt-benzothiadiazole) (F8BT)], and (ii) to elucidate a common reason of the pinning phenomena which have been widely observed for various organic materials on inert electrode surfaces. For (i), the computed results on the electrode-dependence of E F -HOMO and E F -LUMO distance agreed excellently with UPS and Kelvin-probe results. For (ii) we found theoretically that the pinning phenomena occur at systems even without any electronic states in the HOMO-LUMO gap, and thereby indicate that this is a universal Fermi-level pinning-like phenomena for various band gap materials, even if specific interface states do not exist upon contact. We further obtained for Gaussian-distributed HOMO and LUMO that the minimal hole and electron injection barriers are quantitatively determined by degree of standard deviations of HOMO and LUMO bands, which are in excellent agreement with the experimental results. Furthermore, our results provide a guideline for approaching the “zero” injection barriers. [ABSTRACT FROM AUTHOR]