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What is the dopant concentration in polycrystalline thin-film Cu(In,Ga)Se2?
- Source :
-
Thin Solid Films . Jul2017, Vol. 633, p222-226. 5p. - Publication Year :
- 2017
-
Abstract
- We compare the dopant concentration of polycrystalline Cu(In,Ga)Se 2 thin film absorbers derived from Hall and capacitance-voltage measurements. Although both measurements techniques appear to be reliable, dopant concentrations determined by capacitance-voltage analysis are significantly lower and vary with probing depth into the absorber. The doping profiles and differences between both measurement techniques are consistent with Cd in-diffusion from the CdS buffer layer during solar cell fabrication. Different doping profiles obtained after a variation of the CdS deposition process support this scenario. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00406090
- Volume :
- 633
- Database :
- Academic Search Index
- Journal :
- Thin Solid Films
- Publication Type :
- Academic Journal
- Accession number :
- 123503530
- Full Text :
- https://doi.org/10.1016/j.tsf.2016.09.038