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Large magnetoresistance effect in nitrogen-doped silicon.
- Source :
-
AIP Advances . 2017, Vol. 7 Issue 5, p1-5. 5p. - Publication Year :
- 2017
-
Abstract
- In this work, we reported a large magnetoresistance effect in silicon by ion implantation of nitrogen atoms. At room temperature, the magnetoresistance of silicon reaches 125 % under magnetic field 1.7 T and voltage bias -80 V. By applying an alternating magnetic field with a frequency (f ) of 0.008 Hz, we find that the magnetoresistance of silicon is divided into f and 2f two signal components, which represent the linear and quadratic magnetoresistance effects, respectively. The analysis based on tuning the magnetic field and the voltage bias reveals that electric-field-induced space-charge effect plays an important role to enhance both the linear and quadratic magnetoresistance effects. Observation as well as a comprehensive explanation of large MR in silicon, especially based on semiconductor CMOS implantation technology, will be an important progress towards magnetoelectronic applications. [ABSTRACT FROM AUTHOR]
- Subjects :
- *MAGNETORESISTANCE
*ION implantation
*MAGNETIC fields
Subjects
Details
- Language :
- English
- ISSN :
- 21583226
- Volume :
- 7
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- AIP Advances
- Publication Type :
- Academic Journal
- Accession number :
- 123413764
- Full Text :
- https://doi.org/10.1063/1.4972795