Large Anomalous Hall Conductivity and Hall Coefficient of Co2FeSi Thin Films.

Temperature dependent resistivity π(T) and Hall measurements are carried out on 50 nm Co2FeSi thin film deposited at 450°C prepared by magnetron dc sputtering technique. π(T) of this film has been analyzed by taking electron-magnon, electron-phonon and electron-electron scattering processes. Large anomalous Hall conductivity and large anomalous Hall coefficient values than those of single crystal are observed. This large value of Hall conductivity suggest that skew scattering is dominant over intrinsic berry phase contribution. [ABSTRACT FROM AUTHOR]