High-Temperature Electrical and Thermal Aging Performance and Application Considerations for SiC Power DMOSFETs.

Subjects

Subjects :

*METAL oxide semiconductor field-effect transistors
*SILICON carbide
*ELECTRIC properties
*LOGIC circuits
*TEMPERATURE measurements
*THRESHOLD voltage

Details

Language :

English

ISSN :

08858993

Volume :

32

Issue :

10

Database :

Academic Search Index

Journal :

IEEE Transactions on Power Electronics

Publication Type :

Academic Journal

Accession number :

123209517

Full Text :

https://doi.org/10.1109/TPEL.2016.2636743