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The electrical performance and gate bias stability of an amorphous InGaZnO thin-film transistor with HfO2 high-k dielectrics.
- Source :
-
Solid-State Electronics . Jul2017, Vol. 133, p6-9. 4p. - Publication Year :
- 2017
-
Abstract
- In this study, we set out to fabricate an amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT) with SiN x /HfO 2 /SiN x (SHS) sandwiched dielectrics. The J-V and C-V of this SHS film were extracted by the Au/p-Si/SHS/Ti structure. At room temperature the a-IGZO with SHS dielectrics showed the following electrical properties: a threshold voltage of 2.9 V, a subthreshold slope of 0.35 V/decade, an on/off current ratio of 3.5 × 10 7 , and a mobility of 12.8 cm 2 V −1 s −1 . Finally, we tested the influence of gate bias stress on the TFT, and the result showed that the threshold voltage shifted to a positive voltage when applying a positive gate voltage to the TFT. [ABSTRACT FROM AUTHOR]
- Subjects :
- *INDIUM gallium zinc oxide
*THIN film transistors
*SILICON nitride
Subjects
Details
- Language :
- English
- ISSN :
- 00381101
- Volume :
- 133
- Database :
- Academic Search Index
- Journal :
- Solid-State Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 123195231
- Full Text :
- https://doi.org/10.1016/j.sse.2017.04.004